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AOD452A TM N-Channel SDMOS POWER Transistor
General Description
The AOD452A/L is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. AOD452A and AOD452AL are electrically identical. -RoHS Compliant -AOD452AL is Halogen Free
TO-252 D-PAK
Features
VDS (V) = 25V ID = 55A RDS(ON) < 8m RDS(ON) <14m (V GS = 10V) (V GS = 10V) (V GS = 4.5V)
100% UIS Tested! 100% Rg Tested!
Top View D
Bottom View
D
S G S
G
G S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain CurrentG Pulsed Drain Current Avalanche Current
C C C
Maximum 25 20 55 43 120 120 35 31 50 25 2.5 1.6 -55 to 175
Units V V
TC=25C TC=100C ID IDM ISM IAR EAR PD PDSM TJ, TSTG TC=25C
A
Pulsed Forward Diode CurrentC Repetitive avalanche energy L=50H Power Dissipation B Power Dissipation
A
mJ W W C
TC=100C TA=25C TA=70C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Case B Maximum Junction-to-TAB B
Symbol
A A
t 10s Steady-State Steady-State Steady-State
RJA RJC RJC-TAB
Typ 14.2 39 2.5 2.7
Max 20 50 3 3.2
Units C/W C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD452A
Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=30A IS=1A, VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current 990 VGS=0V, VDS=12.5V, f=1MHz VGS=0V, VDS=0V, f=1MHz 210 125 1.1 18 VGS=10V, VDS=12.5V, ID=30A 9 3 4.5 VGS=10V, VDS=12.5V, RL=0.42, RGEN=3 IF=30A, dI/dt=500A/s
2
Conditions ID=250uA, VGS=0V VDS=25V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS, ID=250A VGS=10V, VDS=5V VGS=10V, ID=30A TJ=125C
Min 25
Typ
Max
Units V
10 50 100 1.2 120 6 8.6 11.5 50 0.7 1 55 1180 275 175 1.7 21.7 11 4 6.4 6.8 13.8 21.5 8.7 8.4 13 10.6 16 13 20 1450 350 245 2.5 26 13 5 9 8 12 14 2 3
A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=30A, dI/dt=500A/s
A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. G. The maximum current rating is limited by bond-wires. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev0 : July 2008 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD452A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100 80 60 ID (A) 4V 40 20 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 18 16 Normalized On-Resistance 14 RDS(ON) (m) 12 10 8 6 4 2 0 0 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 5 10 0.8 0 25 50 75 100 125 150 175 VGS=10V 1.8 1.6 1.4 1.2 1 VGS=4.5V VGS=10V ID=30A 2 VGS=3.5V ID(A) 10V 6V 4.5V 7V 60 40 20 0 0 1 2 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics 125C 25C 100 5V 80 VDS=5V
VGS=4.5V ID=20A
17 5 2 10
0
200
Temperature (C) 18 Figure 4: On-Resistance vs. Junction Temperature
30 ID=30A 25 20 RDS(ON) (m) 15 10 25C 5 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 125C IS (A)
1.0E+02 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 125C 25C
40
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD452A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 VDS=12.5V ID=30A Capacitance (pF) 1800 1600 1400 1200 1000 800 600 400 200 0 0 15 20 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 25 0 0 Crss 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 5 25 Coss Ciss
8
VGS (Volts)
6
4
2
1000.0 100.0 ID (Amps) 10.0 1.0 0.1 0.0 0.01 10s
200
10s
Power (W)
160 120 80 40 0 0.0001
RDS(ON) limited DC
100s 1ms 10ms
TJ(Max)=175C TA=25C
TJ(Max)=175C TC=25C
17 5 2 10
0.1
1 VDS (Volts)
10
100
0.001
0.01
0.1
1
Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZJC Normalized Transient Thermal Resistance
Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
0
10
D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=3C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
1
0.1
PD Ton
0.01 0.00001
Single Pulse 0.0001 0.001 0.01 0.1 1
T 10 100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD452A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70 ID(A), Peak Avalanche Current 60 50 40 30 20 10 0 0.000001 TA=150C TA=125C TA=100C TA=25C Power Dissipation (W) 60 50 40 30 20 10 0 0.00001 0.0001 0.001 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note B)
Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability
60 50 Current rating ID(A)
10000
TA=25C
1000
Power (W) 40 30 20 10 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B)
100
17 5 2 10
10
1 0 0 0 0.01 0.1 1 10 100 1000 0
Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
10 ZJA Normalized Transient Thermal Resistance
1
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1 PD Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 T 100 1000
0.01
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD452A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30 25 20 Qrr (nC) 15 10 5 0 0 5 10 15 20 25 30 IS (A) Figure 17: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 25 20 Qrr (nC) 15 10 5 0 0 Irm 200 400 600 800 Qrr Is=20A 125C 25C 125C 25C 10 8 6 4 2 0 1000 15 12 9 6 3 0 0 200 400 600 800 125 S 25C 125C trr trr (ns) Irm (A) 25C 1.5 1 0.5 0 1000 S di/dt (A/s) Figure 20: Diode Reverse Recovery Time and Softness Factor vs. di/dt Qrr Irm 25C 125C 25C di/dt=800A/us 125C 12 10 8 Irm (A) 6 4 2 0 16 14 12 trr (ns) 10 8 6 4 2 0 0 5 10 15 20 25 30 IS (A) Figure 18: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 2.5 2 S trr di/dt=800A/us 125C 3 2.5 2
125C
1 0.5 0
25C
Is=20A
di/dt (A/s) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. di/dt
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
S
25C
1.5
AOD452A
Gate Charge Test Circuit & W aveform
Vgs
Qg
+
VDC
10V
VDC
DUT
+ Vds -
Qgs
Qgd
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
Rg Vgs
Vgs
DUT
VDC
+ Vdd -
90%
10% Vgs
t d(on) t on tr t d(off) t off tf
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
Vds
Id
Vgs
E AR= 1/2 LIAR
Vds
Vgs
2
BVDSS
VDC
+ Vdd -
Rg
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Vds +
DUT
Q rr = - Idt
Vgs
t rr
Vds -
Isd
Vgs
L
Isd
IF
VDC
+ Vdd Vds
dI/dt
I RM
Vdd
Ig
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

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